DYNAMICS OF DEFECT CREATION BY ION-IMPLANTATION IN THERMAL SIO2

被引：24

作者：

DEVINE, RAB

GOLANSKI, A

机构：

来源：

关键词：

D O I：

10.1063/1.333278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2738 / 2740

页数：3

共 19 条

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[4] CREATION AND ANNEALING KINETICS OF MAGNETIC OXYGEN VACANCY CENTERS IN SIO2
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[5] DEVINE RAB, UNPUB NUCL INSTRUM M
[6] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI
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[7] RADIATION-DAMAGE IN ION-IMPLANTED QUARTZ CRYSTALS .2. ANNEALING BEHAVIOR
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 493 - 498
[8] RADIATION-DAMAGE IN ION-IMPLANTED QUARTZ CRYSTALS .1. NUCLEAR AND ELECTRONIC-ENERGY DEPOSITION
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[9] Frieble E.J., 1979, TREATISE MAT SCI TEC, V17, P257
[10] GOLANSKI A, UNPUB