ELECTRON-MOBILITY CALCULATIONS OF IN0.53GA0.47AS TAKING THE 2-MODE LATTICE-VIBRATIONS INTO ACCOUNT

被引：5
作者：
TAKEDA, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1984年 / 23卷 / 04期
关键词：
D O I：
10.1143/JJAP.23.446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：446 / 452
页数：7
相关论文
共 50 条
  • [41] High performance 50nm T-gate In0.52A10.48As/In0.53Ga0.47As metamorphic high electron mobility transistors
    Cao, X
    Thayne, I
    Thoms, S
    Holland, M
    Stanley, C
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 517 - 519
  • [42] Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors on GaAs with InxGa1-xP graded buffer
    Yuan, K
    Radhakrishnan, K
    Zheng, HQ
    Ng, GI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2119 - 2122
  • [43] Theoretical study on the electron structure and optical properties of Cs adsorption on In0.53Ga0.47As (100) β2 (2 x 4) reconstruction surface
    Yin, Lin
    Chen, Liang
    Zhang, Shuqin
    He, Minyou
    Su, Lingai
    Qian, Yunshen
    OPTIK, 2017, 130 : 531 - 538
  • [44] INVESTIGATION OF A TRANSITION REGION BETWEEN EPITAXIAL INP AND IN0.53GA0.47AS LAYERS IN HETEROSTRUCTURES WITH A 2-DIMENSIONAL ELECTRON-GAS
    VOROBEVA, VV
    KRESHCHUK, AM
    MAKAROVA, TL
    NOVIKOV, SV
    POGREBITSKII, KY
    SAVELEV, IG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (06): : 646 - 649
  • [45] Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures
    Kulbachinskii, V. A.
    Lunin, R. A.
    Yuzeeva, N. A.
    Vasilievskii, I. S.
    Galiev, G. B.
    Klimov, E. A.
    SEMICONDUCTORS, 2013, 47 (07) : 935 - 942
  • [46] Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions
    Shi, J.
    Wichmann, N.
    Roelens, Y.
    Bollaert, S.
    APPLIED PHYSICS LETTERS, 2013, 102 (24)
  • [47] Effect of Gate-Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
    Endoh, Akira
    Shinohara, Keisuke
    Awano, Yuji
    Hikosaka, Kohki
    Matsui, Toshiaki
    Mimura, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (01)
  • [48] Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate
    Shi, J.
    Wichmann, N.
    Roelens, Y.
    Bollaert, S.
    APPLIED PHYSICS LETTERS, 2011, 99 (20)
  • [49] Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures
    V. A. Kulbachinskii
    R. A. Lunin
    N. A. Yuzeeva
    I. S. Vasilievskii
    G. B. Galiev
    E. A. Klimov
    Semiconductors, 2013, 47 : 935 - 942
  • [50] Fabrication of self-aligned enhancement-mode In0.53Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack
    Shahrjerdi, Davood
    Rotter, Thomas
    Balakrishnan, Ganish
    Huffaker, Diana
    Tutuc, Emanuel
    Banerjee, Sanjay K.
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (06) : 557 - 560
12345