DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS

被引：80
|
作者：
ESTOP, E [1 ]
IZRAEL, A [1 ]
SAUVAGE, M [1 ]
机构：
[1] UNIV PIERRE & MARIE CURIE,MINERAL CRISTALLOG LAB,CNRS,F-75230 PARIS 05,FRANCE
来源：
ACTA CRYSTALLOGRAPHICA SECTION A | 1976年 / 32卷 / JUL1期
关键词：
D O I：
10.1107/S0567739476001307
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：627 / &
相关论文
共 50 条
  • [41] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY CHARACTERIZATION OF SEMI-INSULATING GAAS
    SHAH, S
    CHAUDHURI, J
    MIER, M
    LOOK, DC
    JOURNAL OF MATERIALS SCIENCE, 1990, 25 (10) : 4298 - 4300
  • [42] Analysis of GaAs/AlAs superlattice structure by X-ray double-crystal diffraction
    Li, L
    Zhong, JC
    Li, M
    Wang, XH
    Liu, GJ
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2005, 19 (15-17): : 2375 - 2379
  • [43] Profiling of double-crystal x-ray diffraction of InGaAs epilayers grown on GaAs
    Okamoto, Kotaro
    Tosaka, Hajime
    Yamaguchi, Ko-ichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (06): : 1239 - 1242
  • [44] Double-Crystal X-Ray Diffractometry and Topography Methods in the Analysis of the Real Structure of Crystals
    D. A. Romanov
    I. A. Prokhorov
    A. E. Voloshin
    V. G. Kosushkin
    A. P. Bolshakov
    V. G. Ralchenko
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2020, 14 : 1113 - 1120
  • [45] RELATION BETWEEN THE WIDTH OF AN X-RAY LINE AND THE RESOLVING POWER OF THE DOUBLE-CRYSTAL SPECTROMETER
    BROGREN, G
    PHYSICAL REVIEW, 1954, 96 (03): : 589 - 589
  • [46] Characterization of process-induced lattice distortion in silicon by double-crystal x-ray topography using a curved collimator
    Kudo, Y
    Liu, KY
    Kawado, S
    Xiaowei, Z
    Hirano, K
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 670 - 674
  • [47] Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry
    Prokhorov, I. A.
    Ralchenko, V. G.
    Bolshakov, A. P.
    Polskiy, A. V.
    Vlasov, A. V.
    Subbotin, I. A.
    Podurets, K. M.
    Pashaev, E. M.
    Sozontov, E. A.
    CRYSTALLOGRAPHY REPORTS, 2013, 58 (07) : 1010 - 1016
  • [48] Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry
    I. A. Prokhorov
    V. G. Ralchenko
    A. P. Bolshakov
    A. V. Polskiy
    A. V. Vlasov
    I. A. Subbotin
    K. M. Podurets
    E. M. Pashaev
    E. A. Sozontov
    Crystallography Reports, 2013, 58 : 1010 - 1016
  • [49] Double-Crystal X-Ray Diffractometry and Topography Methods in the Analysis of the Real Structure of Crystals
    Romanov, D. A.
    Prokhorov, I. A.
    Voloshin, A. E.
    Kosushkin, V. G.
    Bolshakov, A. P.
    Ralchenko, V. G.
    JOURNAL OF SURFACE INVESTIGATION, 2020, 14 (06): : 1113 - 1120
  • [50] X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures
    Pan, Z
    Wang, YT
    Li, LH
    Zhang, W
    Lin, YW
    Zhou, ZQ
    Wu, RH
    JOURNAL OF CRYSTAL GROWTH, 2000, 217 (1-2) : 26 - 32
12345