DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS

被引:80
作者
ESTOP, E [1 ]
IZRAEL, A [1 ]
SAUVAGE, M [1 ]
机构
[1] UNIV PIERRE & MARIE CURIE,MINERAL CRISTALLOG LAB,CNRS,F-75230 PARIS 05,FRANCE
来源
ACTA CRYSTALLOGRAPHICA SECTION A | 1976年 / 32卷 / JUL1期
关键词
D O I
10.1107/S0567739476001307
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:627 / &
相关论文
共 9 条
[1]  
BARBE M, 1974, THESIS PARIS
[2]  
BARRAULT JV, 1975, COMMUNICATION
[3]  
DRUZHININA LV, 1975, SOV PHYS-TECH PHYS, V7, P935
[4]   THERMAL EXPANSION OF ALAS [J].
ETTENBERG, M ;
PAFF, RJ .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+
[5]   COEFFICIENT OF EXPANSION OF GALLIUM ARSENIDE FROM -62 TO 200 DEGREES C [J].
PIERRON, ED ;
PARKER, DL ;
MCNEELY, JB .
ACTA CRYSTALLOGRAPHICA, 1966, 21 :290-&
[6]   INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J].
REINHART, FK ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3171-3175
[7]   X-RAY DETERMINATION OF STRESSES IN THIN-FILMS AND SUBSTRATES BY AUTOMATIC BRAGG ANGLE CONTROL [J].
ROZGONYI, GA ;
CIESIELK.TJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (08) :1053-1057
[8]  
ROZGONYI GA, 1974, J CRYST GROWTH, V27, P106
[9]   PHENOMENOLOGICAL STUDY OF MENISCUS LINES ON SURFACES OF GAAS LAYERS GROWN BY LPE [J].
SMALL, MB ;
BLAKESLEE, AE ;
SHIH, KK ;
POTEMSKI, RM .
JOURNAL OF CRYSTAL GROWTH, 1975, 30 (02) :257-266