Investigation on the InAs1-xSbx epilayers growth on GaAs (001) substrate by molecular beam epitaxy

被引：10

作者：

Benyahia, D. ^{[1
]}

Kubiszyn, L. ^{[2
]}

Michalczewski, K. ^{[1
]}

Keblowski, A. ^{[2
]}

Martyniuk, P. ^{[1
]}

Piotrowski, J. ^{[2
]}

Rogalski, A. ^{[1
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego Str, PL-00908 Warsaw, Poland

[2] Vigo Syst SA, 129-133 Poznanska Str, PL-05850 Ozarow Mazowiecki, Poland

来源：

JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 03期

关键词：

MBE; InAsSb; Hall effect; GaAs; X-ray diffraction;

D O I：

10.1088/1674-4926/39/3/033003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Undoped and Be-doped InAs1-xSbx (0 <= x <= 0.71) epitaxial layers were successfully grown on lattice mismatched semi-insulating GaAs (001) substrate with 2 degrees offcut towards <110>. The effect of the InAs buffer layer on the quality of the grown layers was investigated. Moreover, the influence of Sb/In flux ratio on the Sb fraction was examined. Furthermore, we have studied the defects distribution along the depth of the InAsSb epilayers. In addition, the p-type doping of the grown layers was explored. The InAsSb layers were assessed by X-ray diffraction, Nomarski microscopy, high resolution optical microscopy and Hall effect measurement. The InAs buffer layer was found to be beneficial for the growth of high quality InAsSb layers. The X-ray analysis revealed a full width at half maximum (FWHM) of 571 arcsec for InAs0.87Sb0.13. It is worth noting here that the Hall concentration (mobility) as low (high) as 5 x 10(16) cm(-3) (25000 cm(2)V(-1)s(-1)) at room temperature, has been acquired.

引用

页数：5

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