ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI

被引：23

作者：

DIETRICH, HB ^{[1
]}

WEISENBERGER, WH ^{[1
]}

COMAS, J ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 04期

关键词：

D O I：

10.1063/1.88716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：182 / 184

页数：3

共 14 条

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[2] DOPING OF SILICON BY ION IMPLANTATION [J].

ITOH, T ;

INADA, T ;

KANEKAWA, K .

APPLIED PHYSICS LETTERS, 1968, 12 (08) :244-&

[3] A GAS-RELEASE STUDY OF ANNEALING OF BOMBARDMENT-INDUCED DISORDER (STUDIES ON BOMBARDMENT-INDUCED DISORDER .I. [J].

JECH, C ;

KELLY, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) :465-&

[4]

JOHANSSON NGE, 1971, 1ST P INT C ION IMP, P225

[5]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[6]

KELLY R, 1971, 1ST P INT C ION IMP, P215

[7]

MASTERS BJ, 1971, 1ST P INT C ION IMPL, P224

[8]

MAYER JW, ION IMPLANTATION SEM

[9] ENHANCED DIFFUSION AND OUT-DIFFUSION IN ION-IMPLANTED SILICON [J].

MEYER, O ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4166-&

[10]

MOREHEAD EF, 1971, 1ST P INT C ION IMPL, P25

← 1 2 →