X-RAY TOPOGRAPHIC STUDY OF DARK-SPOT DEFECTS IN GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE WAFERS

被引：24

作者：

KISHINO, S ^{[1
]}

NAKASHIMA, H ^{[1
]}

ITO, R ^{[1
]}

NAKADA, O ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 04期

关键词：

D O I：

10.1063/1.88430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：207 / 209

页数：3

共 9 条

[1] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K [J].

DELOACH, BC ;

HAKKI, BW ;

HARTMAN, RL ;

DASARO, LA .

PROCEEDINGS OF THE IEEE, 1973, 61 (07) :1042-1044

[2]

FUNAKOSHI K, TO BE PUBLISHED

[3] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].

HAYASHI, I ;

PANISH, MB ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&

[4] GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS [J].

ITO, R ;

NAKASHIMA, H ;

NAKADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (08) :1321-1322

[5]

ITO R, TO BE PUBLISHED

[6] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

[7] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J].

REINHART, FK ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3171-3175

[8] ELIMINATION OF DISLOCATIONS IN HETEROEPITAXIAL LAYERS BY CONTROLLED INTRODUCTION OF INTERFACIAL MISFIT DISLOCATIONS [J].

ROZGONYI, GA ;

PETROFF, PM ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1974, 24 (06) :251-254

[9]

ROZGONYI GA, 1974, J CRYST GROWTH, V27, P106

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