GENERALIZED SIMULATOR FOR VAPOR-PHASE EPITAXY ON PATTERNED SUBSTRATES

被引：12
作者：
JONES, SH
SALINAS, LS
机构：
[1] Applied Electrophysics Laboratory, University of Virginia, Charlottesville
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 154卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(95)00884-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A generalized computer simulation technique for predicting the shapes of epitaxial layers grown on patterned substrates is described. Both selective epitaxy and nonplanar substrate epitaxy can be simulated. Simulations are possible for any material system provided the epitaxial growth rate as a function of crystallographic orientation is known. In this paper we compare simulations with experimental results for GaAs low pressure organometallic vapor phase epitaxy, and for GaAs chloride vapor phase epitaxy.
引用
收藏
页码：163 / 171
页数：9
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