DIAMOND GROWTH ON POROUS SILICON BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

被引：11

作者：

LIU, ZH ^{[1
]}

ZONG, BQ ^{[1
]}

LIN, ZD ^{[1
]}

机构：

[1] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA

来源：

THIN SOLID FILMS | 1995年 / 254卷 / 1-2期

关键词：

CHEMICAL VAPOR DEPOSITION; DIAMOND; SILICON;

D O I：

10.1016/0040-6090(95)80010-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films have been grown on porous silicon by hot filament chemical vapor deposition. The films are characterized by scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis, showing that continuous diamond films with crystallinity are obtained on porous silicon. The demonstration of diamond growth on porous silicon seems to suggest that the nanoscale microstructures of porous silicon play an important role in nucleation and growth of diamond.

引用

页码：3 / 6

页数：4

共 20 条

[1]

BACHMANN PK, 1988, DIAMOND DIAMOND LIKE, P99

[2]

BOMCHIL G, 1986, MRS EUROPE 1985, P463

[3] DIAMOND CRYSTAL-GROWTH BY PLASMA CHEMICAL VAPOR-DEPOSITION [J].