TRAP-LIMITED HYDROGEN DIFFUSION IN DOPED SILICON

被引：63
作者：
HERRERO, CP
STUTZMANN, M
BREITSCHWERDT, A
SANTOS, PV
机构：
[1] Max-Planck-Institut f̈r Festkörperforschung, D-7000 Stuttgart 80
来源：
PHYSICAL REVIEW B | 1990年 / 41卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.41.1054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogen depth profiles in highly doped p-type silicon are obtained from the analysis of infrared reflectance spectra of H-passivated samples. From these profiles, H-diffusion coefficients are calculated for different temperatures and dopant concentrations. The results are explained with the assumption that hydrogen diffusion is limited by trapping at the acceptor sites. A binding energy of 0.6 eV is found for B-H complexes, in agreement with previous ab initio calculations. © 1990 The American Physical Society.
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页码：1054 / 1058
页数：5
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