ENHANCEMENT-MODE GAAS MOSFET ON SEMI-INSULATING SUBSTRATE USING A SELF-ALIGNED GATE TECHNIQUE

被引：21
|
作者：
KOHN, E [1 ]
COLQUHOUN, A [1 ]
机构：
[1] UNIV NEWCASTLE UPON TYNE,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,NORTHUMBERLAND,ENGLAND
来源：
ELECTRONICS LETTERS | 1977年 / 13卷 / 03期
关键词：
D O I：
10.1049/el:19770049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：73 / 74
页数：2
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