SURFACE EFFECTS OF RADIATION ON TRANSISTORS

被引:41
作者
PECK, DS
BROWN, WL
BLAIR, RR
SMITS, FM
机构
来源
BELL SYSTEM TECHNICAL JOURNAL | 1963年 / 42卷 / 01期
关键词
D O I
10.1002/j.1538-7305.1963.tb04004.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:95 / +
相关论文
共 6 条
[1]   MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM [J].
BARUCH, P .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :653-&
[2]   ON THE NEUTRON BOMBARDMENT REDUCTION OF TRANSISTOR CURRENT GAIN [J].
EASLEY, JW ;
DOOLEY, JA .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :1024-1028
[3]   REVIEW OF GERMANIUM SURFACE PHENOMENA [J].
KINGSTON, RH .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) :101-114
[4]  
ROSENZWEIG W, 1962, BELL SYST TECH J, V41, P1573
[5]  
SMITS FM, 1961, J BRIT IRE, V22, P161
[6]   SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].
WATKINS, GD ;
CORBETT, JW ;
WALKER, RM .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1198-1203