MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP

被引:49
作者
CHIU, TH
TSANG, WT
CHU, SNG
SHAH, J
DITZENBERGER, JA
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10.1063/1.95595
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O59 [应用物理学];
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页码:408 / 410
页数:3
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共 21 条
[1]  
BEDAIR SM, 1980, I PHYS C SER, V56, P403
[2]   MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].
CHANG, CA ;
LUDEKE, R ;
CHANG, LL ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761
[3]   ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5 [J].
CHERNG, MJ ;
STRINGFELLOW, GG ;
COHEN, RM .
APPLIED PHYSICS LETTERS, 1984, 44 (07) :677-679
[4]   BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
CASEY, HC ;
FOY, PW .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :397-399
[5]  
CHU SNG, UNPUB J APPL PHYS
[6]  
DECREMOUX B, 1981, I PHYS C SER, V56, P115
[7]  
FLAS F, 1982, J PHYS PARIS, V43, P11
[8]   MISCIBILITY GAP IN GAASYSB1-Y SYSTEM [J].
GRATTON, MF ;
GOODCHILD, RG ;
JURAVEL, LY ;
WOOLLEY, JC .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) :25-29
[9]   COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES [J].
HENOC, P ;
IZRAEL, A ;
QUILLEC, M ;
LAUNOIS, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :963-965
[10]   THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS [J].
LAW, HD ;
CHIN, R ;
NAKANO, K ;
MILANO, RA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :275-283