共 50 条
- [31] Characterization of carrier recombination and trapping processes in proton irradiated silicon by microwave absorption transients NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 546 (1-2): : 108 - 112
- [33] Dose dependence of radiation induced segregation in proton irradiated austenitic alloys MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 : 563 - 568
- [34] INVESTIGATION OF THE SWITCHING AND CARRIER RECOMBINATION CHARACTERISTICS IN THE PROTON IRRADIATED AND THERMALLY ANNEALED Si PIN DIODES LITHUANIAN JOURNAL OF PHYSICS, 2010, 50 (02): : 225 - 232
- [37] ANNEAL-INDUCED VARIATIONS OF THE RECOMBINATION (CHARACTERISTICS IN 2 MeV PROTON IRRADIATED Si STRUCTURES LITHUANIAN JOURNAL OF PHYSICS, 2008, 48 (04): : 325 - 331
- [38] Effective generation-recombination parameters in high-energy proton irradiated silicon diodes Appl Phys Lett, 19 (2858-2860):
- [39] Extrinsic recombination processes in proton irradiated InAs/GaAs heterostructures grown by molecular beam epitaxy Journal of Applied Physics, 1993, 73 (02):