SURFACE AND INTERFACE EFFECTS IN A-SI-H OBSERVED BY TRANSIENT GRATING SPECTROSCOPY

被引：5

作者：

KOMURO, S

AOYAGI, Y

SEGAWA, Y

NAMBA, S

MASUYAMA, A

OKAMOTO, H

HAMAKAWA, Y

机构：

[1] OSAKA UNIV,TOYONAKA,OSAKA 560,JAPAN

[2] INST PHYS & CHEM RES,WAKO,SAITAMA 351,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90630-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：501 / 504

页数：4

共 8 条

[1]

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[3]

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[4] OPTICAL-ABSORPTION SPECTRA OF SURFACE OR INTERFACE STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

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[5] STUDY OF OPTICALLY INDUCED DEGRADATION OF CONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT GRATING METHOD [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (09) :807-809

[6] OXIDATION AND INTERFACE STATES IN A-SI-H [J].

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[7] EFFECT OF ADSORBED GASES ON CONDUCTANCE OF AMORPHOUS FILMS OF SEMICONDUCTING SILICON-HYDROGEN ALLOYS [J].

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APPLIED PHYSICS LETTERS, 1978, 33 (04) :353-356

[8] PROPERTIES AND STRUCTURE OF ALPHA-SIC-H FOR HIGH-EFFICIENCY ALPHA-SI SOLAR-CELL [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5273-5281

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