ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE

被引:108
作者
SHAKLEE, KL
POLLAK, FH
CARDONA, M
机构
关键词
D O I
10.1103/PhysRevLett.15.883
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:883 / &
相关论文
共 9 条
[1]   ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J].
CARDONA, M ;
HARBEKE, G .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :813-&
[2]   OPTICAL STUDIES OF BAND STRUCTURE OF INP [J].
CARDONA, M .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) :958-&
[3]  
CARDONA M, 1964, P INT C PHYS SEMICON, P181
[4]   HIGH-SENSITIVITY PIEZOREFLECTIVITY [J].
ENGELER, WE ;
FRITZSCHE, H ;
GARFINKEL, M ;
TIEMANN, JJ .
PHYSICAL REVIEW LETTERS, 1965, 14 (26) :1069-+
[5]   DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J].
GOBELI, GW ;
KANE, EO .
PHYSICAL REVIEW LETTERS, 1965, 15 (04) :142-&
[6]   FIELD EFFECT OF REFLECTANCE IN SILICON [J].
SERAPHIN, BO ;
BOTTKA, N .
PHYSICAL REVIEW LETTERS, 1965, 15 (03) :104-&
[7]   OPTICAL FIELD EFFECT IN SILICON [J].
SERAPHIN, BO .
PHYSICAL REVIEW, 1965, 140 (5A) :1716-&
[8]   FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J].
SERAPHIN, BO ;
HESS, RB .
PHYSICAL REVIEW LETTERS, 1965, 14 (05) :138-&
[9]   ELECTRIC FIELD INDUCED LIGHT ABSORPTION IN CDS [J].
WILLIAMS, R .
PHYSICAL REVIEW, 1960, 117 (06) :1487-1490