ELECTRICAL-CONDUCTIVITY OF SEMICONDUCTORS WITH GRAIN-BOUNDARY BARRIERS

被引：0

作者：

GOLDMAN, EI ^{[1
]}

ZHDAN, AG ^{[1
]}

机构：

[1] ACAD SCI USSR,RADIOENGN & ELECTR INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1098 / 1101

页数：4

共 12 条

[1]

GAIDYALIS VI, 1968, PHYSICAL PROCESSES Z

[2]

GOLDMAN AG, 1971, SOV PHYS SEMICOND+, V5, P644

[3]

GOLDMAN AG, 1972, SOV PHYS DOKL, V17, P262

[4]

GOLDMAN EI, 1975, SOV PHYS SEMICOND+, V9, P905

[5]

MUELLER RK, 1961, J APPL PHYS, V32, P640, DOI 10.1063/1.1736063

[6] CURRENT FLOW ACROSS GRAIN BOUNDARIES IN N-TYPE GERMANIUM .1. [J].

MUELLER, RK .

[7] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1956, 104 (06) :1508-1516

[8]

SANDOMIR.VB, 1974, SOV PHYS SEMICOND+, V7, P881

[9]

SHEINKMAN MK, 1972, SOV PHYS SEMICOND+, V5, P1654

[10] GRAIN BOUNDARY BARRIERS IN GERMANIUM [J].

TAYLOR, WE ;

ODELL, NH ;

FAN, HY .

PHYSICAL REVIEW, 1952, 88 (04) :867-875