Photoelectrochemical behaviour of hydrogenated amorphous silicon (a-Si:H) films

Photoelectrochemical techniques have been employed in the investigation of p-type, n-type and intrinsic hydrogenated amorphous silicon(a-Si : H) films. The results show that the photocurrent response of the films strongly depends on the doped type electrolyte solution and the redox potential of the redox couples. Intrinsic a-Si : H film yields a stable photocurrent much higher than the p- and n-type ones. Based on the measurements, the energy levels and flatband potential of the intrinsic a-Si : H film are given, and the mechanisms of charge transfer in photoelectrochemical cell (PEC) are discussed.