STUDY OF THE ENERGY RELAXATION-TIME OF HOT-ELECTRONS IN GAAS/GAA1AS HETEROSTRUCTURES

被引:9
|
作者
VASS, E
机构
来源
PHYSICA B & C | 1985年 / 134卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90367-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:337 / 341
页数:5
相关论文
共 50 条
  • [42] PICOSECOND PHOTOLUMINESCENCE STUDY OF RELAXATION PHENOMENA OF HOT-ELECTRONS IN A QUASI-ONE-DIMENSIONAL STRUCTURE
    NIWA, S
    SUZUKI, T
    SAWAKI, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8B): : 4515 - 4518
  • [43] Energy Relaxation of Hot Electrons in Lattice-matched AlInN/AlN/GaN Heterostructures
    Zhang, J. -Z.
    Dyson, A.
    Ridley, B. K.
    PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 263 - +
  • [44] ENERGY RELAXATION OF HOT-ELECTRONS IN A QUANTUM-WELL - CONFINED OPTICAL AND ACOUSTIC-PHONON EFFECTS
    LEONAVILA, F
    RODRIGUEZCOPPOLA, H
    COMAS, F
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1995, 189 (01): : 107 - 116
  • [45] ENERGY RELAXATION OF HOT-ELECTRONS IN WIDEBAND FERROMAGNETIC SEMICONDUCTOR AT T GREATER-THAN-OR-EQUAL-TO TC
    KALASHNIKOV, VP
    BEBENIN, NG
    FIZIKA TVERDOGO TELA, 1979, 21 (08): : 2360 - 2366
  • [47] Energy relaxation of hot electrons in GaAs/AlGaAs superlattices measured by infrared differential spectroscopy
    Hilber, W
    Helm, M
    Alavi, K
    Pathak, RN
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 21 (01) : 85 - 90
  • [48] Hot-electrons and negative differential conductance in GaAs1-xNx -: art. no. 033312
    Patanè, A
    Ignatov, A
    Fowler, D
    Makarovsky, O
    Eaves, L
    Geelhaar, L
    Riechert, H
    PHYSICAL REVIEW B, 2005, 72 (03):
  • [49] FEMTOSECOND COLLISION TIMES OF HOT-ELECTRONS IN GAAS DETERMINED BY PICOSECOND TIME-RESOLVED LIGHT-SCATTERING
    HUANG, Y
    YU, PY
    SOLID STATE COMMUNICATIONS, 1987, 63 (02) : 109 - 111
  • [50] Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures
    Ardaravicius, L
    Liberis, J
    Matulionis, A
    Mel'tser, BY
    Solov'ev, VA
    Shubina, TV
    Ivanov, SV
    Kop'ev, PS
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001, 2002, 384-3 : 117 - 120