IMPROVEMENT OF THE THRESHOLD CURRENT OF ALGAAS/GAAS SINGLE QUANTUM-WELL LASERS BY SUBSTRATE TILTING
被引:32
作者:
TAO, IW
论文数: 0引用数: 0
h-index: 0
TAO, IW
SCHWARTZ, C
论文数: 0引用数: 0
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SCHWARTZ, C
WANG, WI
论文数: 0引用数: 0
h-index: 0
WANG, WI
机构:
来源:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
1992年
/
10卷
/
02期
关键词:
D O I:
10.1116/1.586130
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We have grown AlGaAs/GaAs single quantum well lasers by molecular-beam epitaxy on differently misoriented substrates. The threshold current density was observed to be lower on the (511) orientation than the 4-degrees off (100) orientation. We explain this result based on the fact that step-edge densities are different for differently oriented substrates.