IMPROVEMENT OF THE THRESHOLD CURRENT OF ALGAAS/GAAS SINGLE QUANTUM-WELL LASERS BY SUBSTRATE TILTING

被引：32
作者：
TAO, IW
SCHWARTZ, C
WANG, WI
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词：
D O I：
10.1116/1.586130
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have grown AlGaAs/GaAs single quantum well lasers by molecular-beam epitaxy on differently misoriented substrates. The threshold current density was observed to be lower on the (511) orientation than the 4-degrees off (100) orientation. We explain this result based on the fact that step-edge densities are different for differently oriented substrates.
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页码：838 / 840
页数：3
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