GROWTH OF HIGH-PURITY LIQUID-PHASE EPITAXIAL GAAS IN A SILICA GROWTH SYSTEM

被引：3

作者：

BUTCHER, KSA ^{[1
]}

MO, L ^{[1
]}

ALEXIEV, D ^{[1
]}

TANSLEY, TL ^{[1
]}

机构：

[1] AUSTRALIAN NUCL SCI & TECHNOL ORG,MENAI,NSW 2234,AUSTRALIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 156卷 / 04期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1016/0022-0248(95)00297-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Liquid phase epitaxial gallium arsenide layers, greater than 200 mu m thickness and with a low net carrier concentration (N-A,N-D approximate to 10(13) cm(-3)) have been grown in a silicia growth system with silica crucibles. Analysis of electrical and chemical defects was carried out using capacitance-voltage (C-V) measurements, deep level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). Details of the growth procedure are given and it is shown that silicon incorporation in the growth layer is not suppressed by the addition of ppm levels of oxygen to the main hydrogen flow.

引用

页码：361 / 367

页数：7

共 14 条

[1] HIGH-PURITY LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE NUCLEAR RADIATION DETECTOR [J].

ALEXIEV, D ;

BUTCHER, KSA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 317 (1-2) :111-115

[2] THERMAL ANNEALING OF LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE [J].

ALEXIEV, D ;

BUTCHER, KSA ;

EDMONDSON, M ;

TANSLEY, TL .

JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) :367-369

[3] VIBRATIONAL STIRRING OF A LIQUID-PHASE EPITAXIAL GAAS MELT [J].

ALEXIEV, D ;

BUTCHER, KSA ;

TANSLEY, TL .

JOURNAL OF CRYSTAL GROWTH, 1992, 125 (1-2) :378-380

[4] CHARACTERIZATION OF DEFECTS IN SEMICONDUCTORS BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

BENTON, JL .

JOURNAL OF CRYSTAL GROWTH, 1990, 106 (01) :116-126

[5] MINORITY-CARRIER DIFFUSION LENGTHS FOR HIGH-PURITY LIQUID-PHASE EPITAXIAL GAAS [J].

BUTCHER, KSA ;

ALEXIEV, D ;

TANSLEY, TL .

AUSTRALIAN JOURNAL OF PHYSICS, 1993, 46 (02) :317-325

[6] REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE [J].

COCHRAN, CN ;

FOSTER, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :149-154

[7]

DAWSON LR, 1986, DEC LIQ PHAS EP TECH

[8] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J].

HASEGAWA, F ;

MAJERFELD, A .

ELECTRONICS LETTERS, 1975, 11 (14) :286-288

[9]

HICKS HGB, 1971, I PHYS C SER, V9

[10] CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS [J].

MILLER, GL ;

RAMIREZ, JV ;

ROBINSON, DAH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2638-2644

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