DIRECT MEASUREMENT OF REACTION-KINETICS FOR THE DECOMPOSITION OF ULTRATHIN OXIDE ON SI(001) USING SCANNING TUNNELING MICROSCOPY

被引：107
|
作者：
JOHNSON, KE [1 ]
ENGEL, T [1 ]
机构：
[1] UNIV WASHINGTON,DEPT CHEM BG10,SEATTLE,WA 98195
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.69.339
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The spatially inhomogeneous thermal decomposition of monolayer thick oxide films on Si(001) has been investigated. After partial desorption, uniformly distributed voids are formed in the oxide layer. Analysis of the evolution in the void area distribution with extent of desorption suggests that the rate determining step in void growth is the creation of a diffusing Si monomer within the void. This explains the unexpected substantial rearrangement of the Si substrate upon desorption of a single monolayer of oxygen.
引用
收藏
页码：339 / 342
页数：4
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