CHARACTERIZATION OF DEFECTS IN GALLIUM-ARSENIDE

被引：0
作者：
KUMAR, V
MOHAPATRA, YN
机构：
[1] Department of Physics, Indian Institute of Science, Bangalore
来源：
BULLETIN OF MATERIALS SCIENCE | 1990年 / 13卷 / 1-2期
关键词：
deep level transient spectroscopy; Gallium arsenide; photo luminescence; photoconductivity; semi-insulating gallium arsenide;
D O I：
10.1007/BF02744861
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is well-known that the properties of semiconductor materials including gallium arsenide are controlled by defects and impurities. The characterization of these defects is important not only for better understanding of the solid state phenomena but also for improved reliability and performance of electronic devices. We have been investigating the defects in gallium arsenide for several years using deep level transient spectroscopy, photoconductivity, transient photoconductivity, photoluminescence etc. Results drawn from our recent studies are presented here to illustrate some of the problems concerning transition metal impurities, process-induced defects, occurrence of intracentre transitions and metastability of deep levels in gallium arsenide. © 1990 The Indian Academy of Sciences.
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页码：83 / 88
页数：6
相关论文
共 16 条
[1]  
Bourgoin J., Lannoo M., Point defects in semiconductors: II—experimental aspects, (1981)
[2]  
Clerjaud B., J. Phys., 18 C, (1985)
[3]  
Deveaud B., Toulouse B., Semi-insulating III–V materials, (1980)
[4]  
Kalyanraman V., Kumar V., Nucl. Phys. Solid State Phys. (India), 23 C, (1980)
[5]  
Kaufmann U., Scneider J., Adv. Electron.—Electron Phys., 58, (1982)
[6]  
Kremer R.E, Arikan M.C, Abele J.C, Blakemore J.S, J. Appl. Phys., 62, (1987)
[7]  
Kumar V., Ledebo L.A, J. Appl. Phys., 52, (1981)
[8]  
Lin A.L, Bube R.H, J. Appl. Phys., 47, (1976)
[9]  
Look D.C, J. Electron. Mater., 7, (1978)
[10]  
Martin G.M, Bois D., Electrochem. Soc., 78, (1978)
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