DOPING INTERFACE DIPOLES - TUNABLE HETEROJUNCTION BARRIER HEIGHTS AND BAND-EDGE DISCONTINUITIES BY MOLECULAR-BEAM EPITAXY

被引：105
作者：
CAPASSO, F
CHO, AY
MOHAMMED, K
FOY, PW
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期
关键词：
D O I：
10.1063/1.95521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：664 / 666
页数：3
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