DOPING INTERFACE DIPOLES - TUNABLE HETEROJUNCTION BARRIER HEIGHTS AND BAND-EDGE DISCONTINUITIES BY MOLECULAR-BEAM EPITAXY

被引：105

作者：

CAPASSO, F

CHO, AY

MOHAMMED, K

FOY, PW

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：664 / 666

页数：3

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