EFFECTS OF APPLIED MAGNETIC-FIELDS ON SILICON-OXIDE FILMS FORMED BY MICROWAVE PLASMA CVD

被引：13

作者：

FUKUDA, T ^{[1
]}

SUZUKI, K ^{[1
]}

TAKAHASHI, S ^{[1
]}

MOCHIZUKI, Y ^{[1
]}

OHUE, M ^{[1
]}

MOMMA, N ^{[1
]}

SONOBE, T ^{[1
]}

机构：

[1] HITACHI LTD, HITACHI WORKS, HITACHI, IBARAKI 317, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.L1962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1962 / L1965

页数：4

共 7 条

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[2] ROLE OF IONS AND RADICAL SPECIES IN SILICON-NITRIDE DEPOSITION BY ECR PLASMA CVD METHOD
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SETSUNE, K
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L544 - L546
[3] LARGE AREA CHEMICAL VAPOR-DEPOSITION OF DIAMOND PARTICLES AND FILMS USING MAGNETOMICROWAVE PLASMA
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (06): : L1032 - L1034
[4] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L210 - L212
[5] MATSUO S, 1986, 31TH P S SEM INT CIR, P49
[6] MURAKAMI E, 1986, 31TH P S SEM INT CIR, P67
[7] CHEMICAL VAPOR-DEPOSITION OF A-SI-H FILMS UTILIZING A MICROWAVE EXCITED AR PLASMA STREAM
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SHIMADA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (12): : 1805 - 1810