共 50 条
- [41] SOME FEATURES OF THE PHOTOLUMINESCENCE OF EPITAXIAL TELLURIUM-DOPED N-TYPE AlxGa1 - xAs FILMS. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (05): : 673 - 674
- [42] ELECTRICAL PROPERTIES OF VACUUM-DEPOSITED BISMUTH-FILMS INDIAN JOURNAL OF PHYSICS AND PROCEEDINGS OF THE INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE, 1975, 49 (11): : 847 - 855
- [46] ELECTROLUMINESCENCE IN TELLURIUM-DOPED CADMIUM SULPHIDE PHYSICS LETTERS, 1964, 11 (02): : 97 - 98
- [49] PHOTOCHEMICAL ETCHING OF BISMUTH-FILMS ZHURNAL NAUCHNOI I PRIKLADNOI FOTOGRAFII, 1992, 37 (01): : 76 - 80
- [50] PELTIER COEFFICIENT FOR A BOUNDARY SEPARATING SOLID AND LIQUID PHASES OF TIN- AND TELLURIUM-DOPED BISMUTH SOVIET PHYSICS SOLID STATE,USSR, 1968, 9 (10): : 2384 - &