SIMULATION OF VMOS POWER TRANSISTORS

被引:2
作者
FANG, YK
CHANG, CY
CHEN, CH
LIU, BD
WANG, SJ
机构
关键词
D O I
10.1080/00207218408938822
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:331 / 337
页数:7
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共 12 条
[1]  
CAUGHEY DM, 1968, P I ELECT ELECTRON E, V56, P217
[2]  
DAVID RF, 1977, ECC, P324
[3]   EPITAXIAL VVMOS POWER TRANSISTORS [J].
LANE, WA ;
SALAMA, CAT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) :349-355
[4]   COMPUTER-AIDED-DESIGN MODEL FOR HIGH-VOLTAGE DOUBLE DIFFUSED MOS (DMOS) TRANSISTORS [J].
POCHA, MD ;
DUTTON, RW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) :718-726
[5]  
RICHMAN P, 1976, MOSFETS INTEGRATED C
[6]   EXPERIMENTAL AND THEORETICAL-ANALYSIS OF DOUBLE-DIFFUSED MOS-TRANSISTORS [J].
RODGERS, TJ ;
ASAI, S ;
POCHA, MD ;
DUTTON, RW ;
MEINDL, JD .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) :322-331
[7]   EFFECTIVE CARRIER MOBILITY IN SURFACE-SPACE CHARGE LAYERS [J].
SCHRIEFFER, JR .
PHYSICAL REVIEW, 1955, 97 (03) :641-646
[8]   D-MOS TRANSISTOR FOR MICROWAVE APPLICATIONS [J].
SIGG, HJ ;
VENDELIN, GD ;
CAUGE, TP ;
KOCSIS, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) :45-&
[9]   MODELING OF THE ON-RESISTANCE OF LDMOS, VDMOS, AND VMOS POWER TRANSISTORS [J].
SUN, SC ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) :356-367
[10]  
SZE SM, 1981, PHYSICS SEMICONDUCTO