STUDY OF GOLD ACCEPTOR IN A SILICON P+N JUNCTION AND AN N-TYPE MOS CAPACITOR BY THERMALLY STIMULATED CURRENT AND CAPACITANCE MEASUREMENTS

被引：34
作者：
BUEHLER, MG [1 ]
PHILLIPS, WE [1 ]
机构：
[1] NBS, INST APPL TECHNOL, WASHINGTON, DC 20234 USA
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 09期
关键词：
D O I：
10.1016/0038-1101(76)90156-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：777 / +
页数：1
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