COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：31

作者：

MIHARA, M

NOMURA, Y

MANNOH, M

YAMANAKA, K

NARITSUKA, S

SHINOZAKI, K

YUASA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3760 / 3764

页数：5

共 25 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709

[3] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN AL0.28GA0.72AS [J].

BALLINGALL, JM ;

COLLINS, DM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :341-345

[4] IMPURITY AND DEFECT LEVELS IN BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BHATTACHARYA, PK ;

BUHLMANN, HJ ;

ILEGEMS, M ;

STAEHLI, JL .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6391-6398

[5] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].

BRIONES, F ;

COLLINS, DM .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866

[6]

COVINGTON DW, 1979, I PHYS C SER, V45, P171

[7]

DINGLE R, 1976, I PHYS C SER A, V33, P210

[8]

HEIM U, 1974, PHYS STATUS SOLIDI B, V66, P361

[9]

HENNING JCM, 1983, PHYS REV B, V27, P7451, DOI 10.1103/PhysRevB.27.7451

[10] OPTICAL AND ELECTRICAL CHARACTERIZATION OF CHEMICAL DEFECTS IN GAAS-LAYERS GROWN BY MBE [J].

KOSCHEL, WH ;

SMITH, RS ;

HIESINGER, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1336-1339

← 1 2 3 →