EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON

被引：186
|
作者：
STREET, RA
ZESCH, J
THOMPSON, MJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期
关键词：
D O I：
10.1063/1.94441
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：672 / 674
页数：3
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