EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON

被引：186

|

作者：

STREET, RA

ZESCH, J

THOMPSON, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期

关键词：

D O I：

10.1063/1.94441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：672 / 674

页数：3

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