EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON

被引：186

作者：

STREET, RA

ZESCH, J

THOMPSON, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期

关键词：

D O I：

10.1063/1.94441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：672 / 674

页数：3

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[1] MEASUREMENT OF MINORITY-CARRIER CAPTURE CROSS-SECTIONS AND APPLICATION TO GOLD AND PLATINUM IN SILICON
BROTHERTON, SD
BRADLEY, P
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1543 - 1553
[2] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274
[3] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[4] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY
LANG, DV
COHEN, JD
HARBISON, JP
[J]. PHYSICAL REVIEW B, 1982, 25 (08) : 5285 - 5320
[5] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON
STREET, RA
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (16) : 1187 - 1190
[6] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H
STREET, RA
BIEGELSEN, DK
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 969 - 984
[7] MEASUREMENTS OF DEPLETION LAYERS IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
[J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4924 - 4932
[8] TRAPPING PARAMETERS OF DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (11) : 1060 - 1062
[9] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE
TIEDJE, T
CEBULKA, JM
MOREL, DL
ABELES, B
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1425 - 1428
[10] A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS
TIEDJE, T
ROSE, A
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (01) : 49 - 52