ACTIVE OXIDATION OF SI AND SIC IN VISCOUS GAS-FLOW REGIME

被引：129
作者：
HINZE, JW
GRAHAM, HC
机构：
[1] SYST RES LABS INC,DAYTON,OH 45440
[2] USAF,MAT LAB,WRIGHT PATTERSON AFB,OH 45433
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 07期
关键词：
D O I：
10.1149/1.2132997
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1066 / 1073
页数：8
相关论文
共 23 条
[1]   ACTIVE TO PASSIVE TRANSITION IN OXIDATION OF SIC [J].
ANTILL, JE ;
WARBURTON, JB .
CORROSION SCIENCE, 1971, 11 (06) :337-+
[2]  
Bennett CO., 1962, MOMENTUM HEAT MASS T
[3]  
Bruckner R., 1971, Journal of Non-Crystalline Solids, V5, P177, DOI 10.1016/0022-3093(71)90032-9
[4]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[5]   KINETICS AND MECHANISM OF LOW-PRESSURE, HIGH-TEMPERATURE OXIDATION OF SILICON .2. [J].
GELAIN, C ;
CASSUTO, A ;
LEGOFF, P .
OXIDATION OF METALS, 1971, 3 (02) :139-&
[6]   OXIDATION OF SILICON CARBIDE AT 1150 DEGREES TO 1400 DEGREES C AND AT 9 X 10 TO 5 X 10-1 TORR OXYGEN PRESSURE [J].
GULBRANS.EA ;
ANDREW, KF ;
BRASSART, FA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1311-&
[7]   HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE [J].
GULBRANSEN, EA ;
JANSSON, SA .
OXIDATION OF METALS, 1972, 4 (03) :181-+
[8]   OXIDATION OF SILICON AT HIGH TEMPERATURES AND LOW PRESSURE UNDER FLOW CONDITIONS AND VAPOR PRESSURE OF SILICON [J].
GULBRANSEN, EA ;
ANDREW, KF ;
BRASSART, FA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :834-+
[9]   HIGH-TEMPERATURE OXIDATION BEHAVIOR OF A HFB2 + 20 V-O SIC COMPOSITE [J].
HINZE, JW ;
TRIPP, WC ;
GRAHAM, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1249-1254
[10]  
HIRSCHFELDER JO, 1954, MOLECULAR THEORY GAS
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