ANNEALING STUDIES OF HIGHLY DOPED BORON SUPERLATTICES

被引：16

作者：

JACKMAN, TE

HOUGHTON, DC

JACKMAN, JA

DENHOFF, MW

KECHANG, S

MCCAFFREY, J

ROCKETT, A

机构：

[1] ENERGY MINES & RESOURCES CANADA,CANMET,OTTAWA K1A 0G1,ONTARIO,CANADA

[2] NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA

[3] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1984 / 1992

页数：9

共 36 条

[1]

AIZAKI N, 1985, 17TH C SOL STAT DEV, P301

[2]

AKIMOTO K, 1987, 19TH C SOL STAT DEV, P463

[3] SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].

BARNETT, SA ;

GREENE, JE .

SURFACE SCIENCE, 1985, 151 (01) :67-90

[4] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J].

BEAN, JC .

SCIENCE, 1985, 230 (4722) :127-131

[5]

BROWN AA, 1988, PROPERTIES SILICON, P327

[6]

Crank J, 1956, MATH DIFFUSION

[7] BORON SURFACE SEGREGATION IN SILICON MOLECULAR-BEAM EPITAXY [J].

DEFRESART, E ;

WANG, KL ;

RHEE, SS .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :48-50

[8] BORON-OXIDE INTERACTION WITH SILICON IN SILICON MOLECULAR-BEAM EPITAXY [J].

DEFRESART, E ;

RHEE, SS ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :847-849

[9] NONDESTRUCTIVE ION-IMPLANT MONITORING USING LASER RAMAN-SPECTROSCOPY [J].

DEWILTON, AC ;

SIMARDNORMANDIN, M ;

WONG, PTT .

CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) :821-830

[10]

DEWILTON AC, UNPUB

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