VDS VOLTAGE CAPABILITIES OF A DIFFUSED JFET WITH A VERTICAL-CHANNEL ARRANGEMENT

[1] ELECTRICAL PROPERTIES AND SIMPLIFIED THEORY OF A PARTICULAR JUNCTION FIELD-EFFECT TRANSISTOR OPERATING WITH A FORWARD GATE-SOURCE BIAS [J]. ELECTRONICS LETTERS, 1973, 9 (15) : 339 - 341

[2] HEYDEMANN M, 1972, ONDE ELECTR, V52, P185

[3] CARRIER ACCUMULATION AND SPACE-CHARGE-LIMITED CURRENT FLOW IN FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1577 - &

[4] ION-IMPLANTED FET FOR POWER APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 113 - 118

[5] MORENZA JL, 1974, 4 EUR SOL STAT DEV R

[6] A UNIPOLAR STRUCTURE APPLYING LATERAL DIFFUSION [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (07) : 1059 - &

[7] TESZNER S, 1972, IEEE T, VED19, P355

[8] Yagi H., 1974, JEI - Japan Electronic Industry, V21, P18

[9] YAGI H, 1974, JAPAN ELECTRON IND, V21, P22

[10] YAGI H, 1974, JAPAN ELECTRON IND, V21, P28

[1] ELECTRICAL PROPERTIES AND SIMPLIFIED THEORY OF A PARTICULAR JUNCTION FIELD-EFFECT TRANSISTOR OPERATING WITH A FORWARD GATE-SOURCE BIAS [J]. ELECTRONICS LETTERS, 1973, 9 (15) : 339 - 341

[2] HEYDEMANN M, 1972, ONDE ELECTR, V52, P185

[3] CARRIER ACCUMULATION AND SPACE-CHARGE-LIMITED CURRENT FLOW IN FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1577 - &

[4] ION-IMPLANTED FET FOR POWER APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 113 - 118

[5] MORENZA JL, 1974, 4 EUR SOL STAT DEV R

[6] A UNIPOLAR STRUCTURE APPLYING LATERAL DIFFUSION [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (07) : 1059 - &

[7] TESZNER S, 1972, IEEE T, VED19, P355

[8] Yagi H., 1974, JEI - Japan Electronic Industry, V21, P18

[9] YAGI H, 1974, JAPAN ELECTRON IND, V21, P22

[10] YAGI H, 1974, JAPAN ELECTRON IND, V21, P28