EFFECT OF CHLORINATION ON PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON

被引：1
|
作者：
Natarajan, B. [1 ]
Ramakrishnan, V. [2 ]
Vasu, V. [3 ]
Ramamurthy, S. [4 ]
机构：
[1] SACS MAVMM Engn Coll, Dept Phys, Madurai 625301, Tamil Nadu, India
[2] Madurai Kamaraj Univ, Sch Phys, Laser Lab, Madurai 625021, Tamil Nadu, India
[3] Madurai Kamaraj Univ Coll, Dept Phys, Madurai 625002, Tamil Nadu, India
[4] Gandhigram Rural Inst, Dept Phys, Gandhigram 624302, Tamil Nadu, India
来源：
INTERNATIONAL JOURNAL OF NANOSCIENCE | 2007年 / 6卷 / 01期
关键词：
Structural properties; porous silicon; photoluminescence; HF concentration;
D O I：
10.1142/S0219581X07004249
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The surface passivation of porous silicon plays a significant role in emission efficiency of the material. Photoluminescence (PL) studies were carried out for p-type porous silicon and chlorinated porous silicon to understand the effect of surface passivation on porous silicon. Visible photoluminescence was observed at 625nm for both porous silicon and chlorinated porous silicon. The whole sample exhibits a PL band at red region and intensity decreased in chlorinated porous silicon. This paper presents an analytical solution that covers contributions from the components of silicon tetra chloride interface, silicon backbone, and voids using a serial-parallel capacitance method. Simulation study indicates that there is a good correlation between theory and observed PL.
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页码：17 / 22
页数：6
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