EFFECT OF CHLORINATION ON PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON

被引：1

作者：

Natarajan, B. ^{[1
]}

Ramakrishnan, V. ^{[2
]}

Vasu, V. ^{[3
]}

Ramamurthy, S. ^{[4
]}

机构：

[1] SACS MAVMM Engn Coll, Dept Phys, Madurai 625301, Tamil Nadu, India

[2] Madurai Kamaraj Univ, Sch Phys, Laser Lab, Madurai 625021, Tamil Nadu, India

[3] Madurai Kamaraj Univ Coll, Dept Phys, Madurai 625002, Tamil Nadu, India

[4] Gandhigram Rural Inst, Dept Phys, Gandhigram 624302, Tamil Nadu, India

来源：

INTERNATIONAL JOURNAL OF NANOSCIENCE | 2007年 / 6卷 / 01期

关键词：

Structural properties; porous silicon; photoluminescence; HF concentration;

D O I：

10.1142/S0219581X07004249

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The surface passivation of porous silicon plays a significant role in emission efficiency of the material. Photoluminescence (PL) studies were carried out for p-type porous silicon and chlorinated porous silicon to understand the effect of surface passivation on porous silicon. Visible photoluminescence was observed at 625nm for both porous silicon and chlorinated porous silicon. The whole sample exhibits a PL band at red region and intensity decreased in chlorinated porous silicon. This paper presents an analytical solution that covers contributions from the components of silicon tetra chloride interface, silicon backbone, and voids using a serial-parallel capacitance method. Simulation study indicates that there is a good correlation between theory and observed PL.

引用

页码：17 / 22

页数：6

共 30 条

[1] Effective refractive index and composition of oxidized porous silicon films [J].

Astrova, EV ;

Tolmachev, VA .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :142-148

[2] Composition and porosity of multicomponent structures: porous silicon as a three-component system [J].

Belyakov, LV ;

Makarova, TL ;

Sakharov, VI ;

Serenkov, IT ;

Sreseli, OM .

SEMICONDUCTORS, 1998, 32 (09) :1003-1005

[3] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].

Bruggeman, DAG .

ANNALEN DER PHYSIK, 1935, 24 (07) :636-664

[4] Porous silicon dielectric function modeling from effective medium theories [J].

Campos, AM ;

Torres, J ;

Giraldo, JJ .

SURFACE REVIEW AND LETTERS, 2002, 9 (5-6) :1631-1635

[5] The structural and luminescence properties of porous silicon [J].

Cullis, AG ;

Canham, LT ;

Calcott, PDJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965

[6] Surface investigations of nanostructured porous silicon [J].

Galiy, PV ;

Lesiv, TI ;

Monastyrskii, LS ;

Nenchuk, TM ;

Olenych, IB .

THIN SOLID FILMS, 1998, 318 (1-2) :113-116

[7] FOURIER-TRANSFORM IR MONITORING OF POROUS SILICON PASSIVATION DURING POSTTREATMENTS SUCH AS ANODIC-OXIDATION AND CONTACT WITH ORGANIC-SOLVENTS [J].

HORY, MA ;

HERINO, R ;

LIGEON, M ;

MULLER, F ;

GASPARD, F ;

MIHALCESCU, I ;

VIAL, JC .

THIN SOLID FILMS, 1995, 255 (1-2) :200-203

[8] Nanoporous silica as an ultralow-k dielectric [J].

Jin, CM ;

Luttmer, JD ;

Smith, DM ;

Ramos, TA .

MRS BULLETIN, 1997, 22 (10) :39-42

[9]

Kim YY, 2003, J KOREAN PHYS SOC, V43, P170

[10] POST-ANODIZATION FILTERED ILLUMINATION OF POROUS SILICON IN HF SOLUTIONS - AN EFFECTIVE METHOD TO IMPROVE LUMINESCENCE PROPERTIES [J].

KOYAMA, H ;

NAKAGAWA, T ;

OZAKI, T ;

KOSHIDA, N .

APPLIED PHYSICS LETTERS, 1994, 65 (13) :1656-1658

← 1 2 3 →