Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition

被引：1

作者：

Xu Shengrui ^{[1
]}

Zhou Xiaowei ^{[1
]}

Hao Yue ^{[1
]}

Mao Wei ^{[1
]}

Zhang Jincheng ^{[1
]}

Zhang Zhongfen ^{[1
]}

Bai Lin ^{[2
]}

Zhang Jinfeng ^{[1
]}

Li Zhiming ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Fundamental Sci Natl Wide Band Gap Semico, Xian 710071, Shaanxi, Peoples R China

[2] China Acad Space Technol, Xian Div, Xian 710000, Shaanxi, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 11期

基金：

中国国家自然科学基金;

关键词：

GaN; anisotropic; HRXRD; nonpolar;

D O I：

10.1088/1674-4926/30/11/113001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.

引用

页数：3

共 14 条

[1] Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers [J].

Darakehieva, V. ;

Paskova, T. ;

Schubert, M. ;

Paskov, P. P. ;

Arwin, H. ;

Monemar, B. ;

Hommel, D. ;

Heuken, M. ;

Off, J. ;

Haskell, B. A. ;

Fini, P. T. ;

Speck, J. S. ;

Nakamura, S. .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) :233-238

[2] High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates [J].

Frayssinet, E ;

Knap, W ;

Lorenzini, P ;

Grandjean, N ;

Massies, J ;

Skierbiszewski, C ;

Suski, T ;

Grzegory, I ;

Porowski, S ;

Simin, G ;

Hu, X ;

Khan, MA ;

Shur, MS ;

Gaska, R ;

Maude, D .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2551-2553

[3] Improvements in a-plane GaN crystal quality by a two-step growth process [J].

Hollander, J. L. ;

Kappers, M. J. ;

McAleese, C. ;

Humphreys, C. J. .

APPLIED PHYSICS LETTERS, 2008, 92 (10)

[4] High-quality a-plane GaN grown with flow-rate modulation epitaxy on r-plane sapphire substrate [J].

Huang, Jeng-Jie ;

Tang, Tsung-Yi ;

Huang, Chi-Feng ;

Yang, C. C. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (11) :2712-2716

[5] Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy [J].

Ide, T ;

Shimizu, M ;

Shen, XQ ;

Jeganathan, K ;

Okumura, H ;

Nemoto, T .

JOURNAL OF CRYSTAL GROWTH, 2002, 245 (1-2) :15-20

[6] Nonpolar (11-20) plane AlGaN/GaN heterojunction field effect transistors on (1-102) plane sapphire [J].

Kuroda, Masayuki ;

Ishida, Hidetoshi ;

Ueda, Tetsuzo ;

Tanaka, Tsuyoshi .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)

[7] Stress-induced anisotropy of phosphorous islands on gallium arsenide [J].

Li, CH ;

Li, L ;

Fu, Q ;

Begarney, MJ ;

Hicks, RF .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2139-2141

[8] Morphology of threading dislocations in high-resistivity GaN films observed by transmission electron microscopy [J].

Lu, L. ;

Shen, B. ;

Xu, F. J. ;

Xu, J. ;

Gao, B. ;

Yang, Z. J. ;

Zhang, G. Y. ;

Zhang, X. P. ;

Xu, J. ;

Yu, D. P. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (03)

[9] Nitride-based high electron mobility transistors with a GaN spacer [J].

Palacios, T. ;

Shen, L. ;

Keller, S. ;

Chakraborty, A. ;

Heikman, S. ;

DenBaars, S. P. ;

Mishra, U. K. ;

Liberis, J. ;

Kiprijanovic, O. ;

Matulionis, A. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

[10] Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates [J].

Roder, C. ;

Einfeldt, S. ;

Figge, S. ;

Paskova, T. ;

Hommel, D. ;

Paskov, P. P. ;

Monemar, B. ;

Behn, U. ;

Haskell, B. A. ;

Fini, P. T. ;

Nakamura, S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)

← 1 2 →