Role of activation energy in resistance drift of amorphous phase change materials

被引：42

作者：

Wimmer, Martin ^{[1
]}

Kaes, Matthias ^{[1
]}

Dellen, Christian ^{[1
]}

Salinga, Martin ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 1A Phys New Mat, Sommerfeldstr 14, D-52074 Aachen, Germany

来源：

FRONTIERS IN PHYSICS | 2014年 / 2卷

关键词：

phase change materials; amorphous semiconductors; chalcogenides; resistance drift; thermally activated electrical transport; GeTe; GeSbTe; AgInSbTe;

D O I：

10.3389/fphy.2014.00075

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The time evolution of the resistance of amorphous thin films of the phase change materials Ge2Sb2Te5, GeTe and AgIn-Sb2Te is measured during annealing at T = 80 degrees C. The annealing process is interrupted by several fast temperature dips to determine the changing temperature dependence of the resistance. This procedure enables us to identify to what extent the resistance increase over time can be traced back to an increase in activation energy EA or to a rise of the prefactor R*. We observe that, depending on the material, the dominating contribution to the increase in resistance during annealing can be either a change in activation energy ( Ge2Sb2Te5) or a change in prefactor (AgIn-Sb2Te). In the case of GeTe, both contribute about equally. We conclude that any phenomenological model for the resistance drift in amorphous phase change materials that is based on the increase of one parameter alone (e.g., the activation energy) cannot claim general validity.

引用

页码：1 / 12

页数：12

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