INVESTIGATION OF RADIATION DEFECTS IN ELECTRON-IRRADIATED HG1-XCDXTE CRYSTALS USING POSITRON-ANNIHILATION

被引:7
作者
VOITSEKHOVSKII, AV [1 ]
KOKHANENKO, AP [1 ]
PETROV, AS [1 ]
LILENKO, YV [1 ]
POGREBNYAK, AD [1 ]
机构
[1] SM KIROV POLYTECH INST,INST NUCL PHYS,TOMSK,USSR
关键词
D O I
10.1002/crat.2170230221
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:237 / 241
页数:5
相关论文
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[4]   RADIATION DEFECT ANNEALING OF ELECTRON-IRRADIATED HG1-XCDXTE CRYSTALS UNDER VARIOUS THERMAL TREATMENTS [J].
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[5]   RECOMBINATION EFFECTS IN NARROW-GAP SEMICONDUCTORS P-HG1-XCDXTE [J].
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