FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS

被引：597

作者：

LANG, DV ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.1663718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3014 / 3022

页数：9

相关论文

共 32 条

[1] MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP
BACHRACH, RZ
LORIMOR, OG
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 500 - &
[2] PHOTOCAPACITANCE MEASUREMENTS OF ENERGY-LEVELS IN ZNSE-MN
BRAUN, S
GRIMMEIS.HG
ALLEN, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 527 - 530
[3] STRAPPING ANALYSIS IN GALLIUM ARSENIDE
CARBALLES, JC
LEBAILLY, J
[J]. SOLID STATE COMMUNICATIONS, 1968, 6 (03) : 167 - +
[4] DEFECT CENTERS IN BORON-IMPLANTED SILICON
CHAN, WW
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 4768 - &
[5] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS
CROWELL, CR
BEGUWALA, M
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1149 - &
[6] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE
DEAN, PJ
HENRY, CH
FROSCH, CJ
[J]. PHYSICAL REVIEW, 1968, 168 (03): : 812 - &
[7] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 503 - +
[8] TRAP LEVELS IN GALLIUM ARSENIDE
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 675 - &
[9] CHARGE-CARRIER CAPTURE AND ITS EFFECT ON TRANSITION CAPACITANCE IN GAP-CU DIODES
GRIMMEIS.HG
OLOFSSON, G
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2526 - +
[10] INADVERTENT DEEP CENTERS IN N-TYPE GAP FROM SCHOTTKY-BARRIER PHOTOCAPACITANCE
HAMILTON, B
SMITH, BL
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (12) : 674 - 676

← 1 2 3 4 →