ELECTRICAL-PROPERTIES OF HEAVILY SI-DOPED (311)A GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：38

作者：

AGAWA, K

HIRAKAWA, K

SAKAMOTO, N

HASHIMOTO, Y

IKOMA, T

机构：

[1] Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have systematically studied the electrical properties of heavily Si-doped GaAs grown on the (311)A GaAs surfaces by molecular beam epitaxy. It is found that the conduction type drastically changes from p type to n type with decreasing growth temperature at a critical temperature of approximately 430-degrees-C for uniform doping and approximately 480-degrees-C for the delta-doping case, with the transition temperature width as narrow as approximately 50-degrees-C for both cases. The highest hole density obtained for uniformly doped layers was 1.5 x 10(20) cm-3, while for delta-doped layers a sheet hole density as high as 2.6 x 10(13) cm-2 was achieved, which is the highest sheet bole density ever reported for delta-doped p-type GaAs.

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页码：1171 / 1173

页数：3

相关论文

共 16 条

[1] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J].

GOSSARD, AC ;

PETROFF, PM ;

WEIGMANN, W ;

DINGLE, R ;

SAVAGE, A .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :323-325

[2] DELTA-DOPING OF GAAS AND AL0.33GA0.67AS WITH SN, SI AND BE - A COMPARATIVE-STUDY [J].

HARRIS, JJ ;

CLEGG, JB ;

BEALL, RB ;

CASTAGNE, J ;

WOODBRIDGE, K ;

ROBERTS, C .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :239-245

[3] INTERFACE ROUGHNESS IN ALAS/GAAS QUANTUM WELLS CHARACTERIZED BY THE MOBILITY OF TWO-DIMENSIONAL ELECTRONS [J].

HIRAKAWA, K ;

NODA, T ;

SAKAKI, H .

SURFACE SCIENCE, 1988, 196 (1-3) :365-366

[4] CARBON DOPING OF MBE GAAS AND GA0.7AL0.3AS FILMS USING A GRAPHITE FILAMENT [J].

HOKE, WE ;

LEMONIAS, PJ ;

LYMAN, PS ;

HENDRIKS, HT ;

WEIR, D ;

COLOMBO, P .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :269-273

[5] METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KONAGAI, M ;

YAMADA, T ;

AKATSUKA, T ;

SAITO, K ;

TOKUMITSU, E ;

TAKAHASHI, K .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :167-173

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF SILICON-DOPED ALGAAS AND GAAS ON (311)A GAAS SUBSTRATES AND THEIR DEVICE APPLICATIONS [J].

LI, WQ ;

BHATTACHARYA, PK ;

KWOK, SH ;

MERLIN, R .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) :3129-3135

[7] CARBON DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS FROM A HEATED GRAPHITE FILAMENT [J].

MALIK, RJ ;

NOTTENBERG, RN ;

SCHUBERT, EF ;

WALKER, JF ;

RYAN, RW .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2661-2663

[8] PROBLEMS RELATED TO THE FORMATION OF LATERAL P-N-JUNCTIONS ON CHANNELED SUBSTRATE (100) GAAS FOR LASERS [J].

MEIER, HP ;

BROOM, RF ;

EPPERLEIN, PW ;

VANGIESON, E ;

HARDER, C ;

JACKEL, H ;

WALTER, W ;

WEBB, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :692-695

[9]

MUNOZ A, 1990, PHYS REV B, V41, P2976, DOI 10.1103/PhysRevB.41.2976

[10] A COMPARISON OF ATOMIC CARBON VERSUS BERYLLIUM ACCEPTOR DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

NAGLE, J ;

MALIK, RJ ;

GERSHONI, D .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :264-268