PATTERNING-ASSISTED CONTROL FOR ORDERED ARRANGEMENT OF ATOMIC STEPS ON SI(111) SURFACES

被引：31
|
作者：
OGINO, T [1 ]
HIBINO, H [1 ]
HOMMA, Y [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 6A期
关键词：
SILICON; SILICON PROCESS; PATTERNED SURFACE; STEP; ATOM-SCALE CONTROL; WAFER-SCALE CONTROL; SCANNING ELECTRON MICROSCOPY; SELF-ORGANIZATION;
D O I：
10.1143/JJAP.34.L668
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose a novel technique for organizing steps on Si surfaces. Arrays of small holes are formed on Si(111) wafers misoriented toward [11 ($) over bar 2] by using conventional Si technology. The wafers are then annealed in an ultrahigh vacuum at about 1300 degrees C. During the hole filling-in process, steps on the surface are arranged regularly, and finally parallel step bands are ordered after the holes have completely disappeared.
引用
收藏
页码：L668 / L670
页数：3
相关论文
共 41 条
  • [31] Laser-induced mono-atomic-layer etching on Cl-adsorbed Si(111) surfaces
    Iimori, T
    Hattori, K
    Shudo, K
    Iwaki, T
    Ueta, M
    Komori, F
    APPLIED SURFACE SCIENCE, 1998, 130 : 90 - 95
  • [32] NH4OH-Treated Si(111) surfaces studied by spectroscopic ellipsometry and atomic force microscopy
    Kobayashi, K
    Adachi, S
    Takizawa, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2A): : 515 - 519
  • [33] ETCHING MECHANISM AND ATOMIC-STRUCTURE OF H-SI(111) SURFACES PREPARED IN NH4F
    ALLONGUE, P
    KIELING, V
    GERISCHER, H
    ELECTROCHIMICA ACTA, 1995, 40 (10) : 1353 - 1360
  • [34] Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface
    Sitnikov, S. V.
    Latyshev, A. V.
    Kosolobov, S. S.
    JOURNAL OF CRYSTAL GROWTH, 2017, 457 : 196 - 201
  • [35] Water wettability of Si(111) and (001) surfaces prepared to be reconstructed, atomic-hydrogen terminated and thinly oxidized in an ultrahigh vacuum chamber
    Miyagi, Tomoaki
    Sasahara, Akira
    Tomitori, Masahiko
    APPLIED SURFACE SCIENCE, 2015, 349 : 904 - 910
  • [36] Comparative study of the atomic hydrogen interaction with Si(110)''4x6''-Al and Si(111)root 3x root 3-Al surfaces
    Khramtsova, EA
    Saranin, AA
    Ignatovich, KV
    Lifshits, VG
    SURFACE SCIENCE, 1996, 366 (03) : 501 - 507
  • [37] Direct observation for atomically flat and ordered vertical {111} side-surfaces on three-dimensionally figured Si(110) substrate using scanning tunneling microscopy
    Yang, Haoyu
    Hattori, Azusa N.
    Ohata, Akinori
    Takemoto, Shohei
    Hattori, Ken
    Daimon, Hiroshi
    Tanaka, Hidekazu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (11)
  • [38] Reply to 'Comment on "Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope" by H.J.W. Zandvliet'
    Yang, HQ
    Zhu, CX
    Gao, JN
    Xue, ZQ
    Pang, SJ
    SURFACE SCIENCE, 2000, 449 (1-3) : L265 - L266
  • [39] In-Plane Orientation Control of 2,7-Diphenyl[1]benzothieno[3,2-b][1]benzothiophene Monolayer on Bismuth-Terminated Si(111) Vicinal Surfaces with Wettability Optimization
    Ohtomo, Manabu
    Tsuchida, Yuya
    Muraya, Naoki
    Yanase, Takashi
    Sakai, Seiji
    Yonezawa, Tetsu
    Nagahama, Taro
    Hasegawa, Tetsuya
    Shimada, Toshihiro
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (22) : 11555 - 11561
  • [40] Hydrogen chemisorption on the Si(111)√3x√3R30°-Al, -Ga, -B surfaces:: An ab initio HF/DFT molecular orbital modelling using atomic clusters
    Wang, SW
    Radny, MW
    Smith, PV
    COMPUTATIONAL MATERIALS SCIENCE, 1998, 10 (1-4) : 99 - 104
12345