PATTERNING-ASSISTED CONTROL FOR ORDERED ARRANGEMENT OF ATOMIC STEPS ON SI(111) SURFACES

被引：31

作者：

OGINO, T ^{[1
]}

HIBINO, H ^{[1
]}

HOMMA, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 6A期

关键词：

SILICON; SILICON PROCESS; PATTERNED SURFACE; STEP; ATOM-SCALE CONTROL; WAFER-SCALE CONTROL; SCANNING ELECTRON MICROSCOPY; SELF-ORGANIZATION;

D O I：

10.1143/JJAP.34.L668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a novel technique for organizing steps on Si surfaces. Arrays of small holes are formed on Si(111) wafers misoriented toward [11 ($) over bar 2] by using conventional Si technology. The wafers are then annealed in an ultrahigh vacuum at about 1300 degrees C. During the hole filling-in process, steps on the surface are arranged regularly, and finally parallel step bands are ordered after the holes have completely disappeared.

引用

页码：L668 / L670

页数：3

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