RAMAN-SCATTERING IN GE-GE1-XSIX SUPERLATTICE

被引：7

作者：

CARLES, R

MLAYAH, A

LANDA, G

KUSNETSOV, OA

ORLOV, LK

VDOVIN, VI

MILVIDSKII, MG

ARONZON, BA

机构：

[1] STATE UNIV NIZHNIY NOVGOROD,PHYSICOTECH RES INST,NIZHNII NOVGOROD,RUSSIA

[2] USSR ACAD SCI,INST APPL PHYS,NIZHNII NOVGOROD,RUSSIA

[3] MOSCOW STATE UNIV RARE MET,MOSCOW,RUSSIA

[4] IV KURCHATOV ATOM ENERGY INST,MOSCOW,RUSSIA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1993年 / 13卷 / 01期

关键词：

D O I：

10.1006/spmi.1993.1022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman studies of Ge based Ge1-xSix superlattices are presented. Using Raman spectroscopy as a local probe, only the first Ge-Ge1-xSix bilayer underneath the surface is explored. It is shown that the top Ge layer experiences a biaxial elastic stress which we evaluate. The silicon content of the Ge1-xSix layer is deduced from the peak frequency of both Ge-Ge and Ge-Si bond vibrations. The Ge-Ge1-xSix interfacial perfection is also investigated. The Raman data reveal a smearing of this heteroboundary. © 1993 Academic Press. All rights reserved.

引用

页码：109 / 114

页数：6

共 21 条

[1] RAMAN-SPECTRA OF C-SI1-XGEX ALLOYS
ALONSO, MI
WINER, K
[J]. PHYSICAL REVIEW B, 1989, 39 (14): : 10056 - 10062
[2] ARONZON BA, IN PRESS APPLIED PHY
[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[4] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[5] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[6] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES
CERDEIRA, F
PINCZUK, A
BEAN, JC
BATLOGG, B
WILSON, BA
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1138 - 1140
[7] HIGH-RESOLUTION RAMAN-SPECTROSCOPY OF GE-RICH C-GE1-XSIX ALLOYS - FEATURES OF THE GE-GE VIBRATIONAL-MODES
FUCHS, HD
GREIN, CH
ALONSO, MI
CARDONA, M
[J]. PHYSICAL REVIEW B, 1991, 44 (23): : 13120 - 13123
[8] GAISLER VA, 1989, FIZ TVERD TELA+, V31, P292
[9] ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY
KASPER, E
HERZOG, HJ
KIBBEL, H
[J]. APPLIED PHYSICS, 1975, 8 (03): : 199 - 205
[10] KUSNETSOV OA, 1984, MULTILAYER SEMICONDU, V20

← 1 2 3 →