ESR OF THE EXCITED DIVACANCY TRIPLET-STATE IN SILICON

[1] Brosious P. R., 1979, I PHYS C SER, V46, P248

[2] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1968 - &

[3] ACCUMULATION AND TRANSFORMATION OF RADIATION DEFECTS IN SILICON UNDER DIFFERENT DOSES AND INTENSITIES OF ELECTRON-IRRADIATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (01): : 127 - 134

[4] EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES [J]. PHYSICAL REVIEW B, 1976, 13 (06) : 2653 - 2666

[5] MAKGINN S, 1972, MOL SPEKTROSKOPIYA T

[6] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 258 - 263

[7] VLASENKO LS, 1986, ZH EKSP TEOR FIZ+, V91, P1037

[8] VLASENKO LS, 1984, PISMA ZH TEKH FIZ+, V10, P1529

[9] VLASENKO LS, 1986, IZV AN SSSR FIZ+, V50, P239

[10] VLASENKO LS, 1988, IZV AN SSSR FIZ+, V52, P441

[1] Brosious P. R., 1979, I PHYS C SER, V46, P248

[2] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1968 - &

[3] ACCUMULATION AND TRANSFORMATION OF RADIATION DEFECTS IN SILICON UNDER DIFFERENT DOSES AND INTENSITIES OF ELECTRON-IRRADIATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (01): : 127 - 134

[4] EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES [J]. PHYSICAL REVIEW B, 1976, 13 (06) : 2653 - 2666

[5] MAKGINN S, 1972, MOL SPEKTROSKOPIYA T

[6] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 258 - 263

[7] VLASENKO LS, 1986, ZH EKSP TEOR FIZ+, V91, P1037

[8] VLASENKO LS, 1984, PISMA ZH TEKH FIZ+, V10, P1529

[9] VLASENKO LS, 1986, IZV AN SSSR FIZ+, V50, P239

[10] VLASENKO LS, 1988, IZV AN SSSR FIZ+, V52, P441