ELIMINATION OF GAAS OVAL DEFECTS AND HIGH-THROUGHPUT FABRICATION OF SELECTIVELY DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES BY MBE

被引：20
作者：
FRONIUS, H
FISCHER, A
PLOOG, K
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(87)90386-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：169 / 174
页数：6
相关论文
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