共 6 条
AN ALTERNATIVE MG PRECURSOR FOR P-TYPE DOPING OF OMVPE GROWN MATERIAL
被引:37
作者:

TIMMONS, ML
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CHIANG, PK
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HATTANGADY, SV
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关键词:
D O I:
10.1016/0022-0248(86)90279-4
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
引用
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页码:37 / 41
页数:5
相关论文
共 6 条
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METALORGANIC VAPOR-PHASE-EPITAXIAL GROWTH OF MG-DOPED GA1-XALXAS LAYERS AND THEIR PROPERTIES
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KOZEN, A
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NOJIMA, S
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TENMYO, J
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ASAHI, H
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THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS
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LEWIS, CR
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DIETZE, WT
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LUDOWISE, MJ
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LUDOWISE, MJ
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[4]
IONIZED MG DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS
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MANNOH, M
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NOMURA, Y
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ISHII, M
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1986, 59 (04)
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MANNOH, M
论文数: 0 引用数: 0
h-index: 0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

NOMURA, Y
论文数: 0 引用数: 0
h-index: 0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

SHINOZAKI, K
论文数: 0 引用数: 0
h-index: 0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

MIHARA, M
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h-index: 0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

ISHII, M
论文数: 0 引用数: 0
h-index: 0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
[5]
A STUDY OF P-TYPE DOPANTS FOR INP GROWN BY ADDUCT MOVPE
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NELSON, AW
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WESTBROOK, LD
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[6]
FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS
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ROBERTS, JS
论文数: 0 引用数: 0
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机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND

MASON, NJ
论文数: 0 引用数: 0
h-index: 0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND

ROBINSON, M
论文数: 0 引用数: 0
h-index: 0
机构:
CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND CAMBRIDGE INSTRUMENTS LTD,CAMBRIDGE CB1 3QH,ENGLAND