SEMI-CYLINDRICAL ZN-DIFFUSED STRIPE GAAIAS LASER-DIODES WITH VERY LOW THRESHOLD CURRENTS

被引：1

作者：

HANAMITSU, K

OHSAKA, S

YOSHIDA, K

NISHI, H

HORI, K

TAKUSAGAWA, M

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 19期

关键词：

D O I：

10.1049/el:19820580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：853 / 855

页数：3

共 6 条

[1] STABILIZED ZINC DIFFUSED-PROTON BOMBARDED (GAAL)AS LASER [J].

BOULEY, JC ;

LANDREAU, J ;

DELPECH, P ;

GED, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :767-771

[2] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].

COOK, DD ;

NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1660-1672

[3] HIGH-EFFICIENCY, LOW-THRESHOLD, ZN-DIFFUSED NARROW STRIPE GAAS/GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HONG, CS ;

COLEMAN, JJ ;

DAPKUS, PD ;

LIU, YZ .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :208-210

[4]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P82

[5] TWIN-TRANSVERSE-JUNCTION STRIPE LASER WITH LINEAR LIGHT-CURRENT CHARACTERISTIC AND LOW THRESHOLD [J].

THOMPSON, GHB ;

LOVELACE, DF ;

TURLEY, SEH .

ELECTRONICS LETTERS, 1979, 15 (04) :133-134

[6]

YONEZU H, 1977, JPN J APPL PHYS, V16, P133

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