Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature

被引：0
|
作者：
Bert, NA [1 ]
Chaldyshev, VV [1 ]
Lubyshev, DI [1 ]
Preobrazhenskii, VV [1 ]
Semyagin, BR [1 ]
机构：
[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA
来源：
SEMICONDUCTORS | 1995年 / 29卷 / 12期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is shown that two-dimensional layers of nanosize arsenic clusters, separated by a GaAs matrix which does not contain clusters, can be formed by means of delta-doping with indium in GaAs films grown by molecular-beam epitaxy at low temperature (200 degrees C). Spatially-ordered cluster structures were obtained in epitaxial GaAs films doped with Si donors and Be accepters as well as films which were not doped with electrically-active impurities, (C) 1995 American Institute of Physics.
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页码：1170 / 1171
页数：2
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