Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature

被引：0

作者：

Bert, NA ^{[1
]}

Chaldyshev, VV ^{[1
]}

Lubyshev, DI ^{[1
]}

Preobrazhenskii, VV ^{[1
]}

Semyagin, BR ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA

来源：

SEMICONDUCTORS | 1995年 / 29卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that two-dimensional layers of nanosize arsenic clusters, separated by a GaAs matrix which does not contain clusters, can be formed by means of delta-doping with indium in GaAs films grown by molecular-beam epitaxy at low temperature (200 degrees C). Spatially-ordered cluster structures were obtained in epitaxial GaAs films doped with Si donors and Be accepters as well as films which were not doped with electrically-active impurities, (C) 1995 American Institute of Physics.

引用

页码：1170 / 1171

页数：2

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