TRANSIENT-BEHAVIOR OF SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SOI MOSFETS

被引：15

作者：

ASSADERAGHI, F

CHEN, J

SOLOMON, R

CHAN, TY

KO, PK

HU, CM

机构：

[1] INTEL CORP,SANTA CLARA,CA 94050

[2] CYPRESS SEMICOND INC,SAN JOSE,CA 95134

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 10期

关键词：

D O I：

10.1109/55.119175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFET's show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the above phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.

引用

页码：518 / 520

页数：3

共 5 条

[1] A CV TECHNIQUE FOR MEASURING THIN SOI FILM THICKNESS
CHEN, J
SOLOMON, R
CHAN, TY
KO, PK
HU, CM
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 453 - 455
[2] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS
COLINGE, JP
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 244 - 246
[3] RAPID ELECTRICAL MEASUREMENTS OF BACK OXIDE AND SILICON FILM THICKNESS IN AN SOI CMOS PROCESS
HAOND, M
TACK, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 674 - 676
[4] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244
[5] SZE SM, 1981, PHYSICS SEMICONDUCTO, P447

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